preliminary datasheet lpm 9029c lp m 9029c may . - 20 1 4 email: marketing@lowpowersemi.com www.lowpowersemi.com page 1 of 5 n and p - channel enhancement power mosfet general description the lp m 9029c integrates n - channel and p - channel enhancement mos f et transistor. it u ses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for us ing in dc - dc conversion, power switch and charging circuit. standard product lpm 9029c is pb - free and halogen - free. ordering information lp m 9029c f: pb - free package type so: sop - 8 pin configurations features ? trench technology ? nmos: v nd s =30v, i nd = 12 a r nd s(on) < 40 m @ v gs = 2.5 v r nd s(on) < 20 m @ v gs = 4.5 v ? pmos: v pd s = - 20 v, i pd = - 4.5 a r pd s(on) < 95 m @ v gs = - 2 .5 v r pd s(on) < 60 m @ v gs = - 4.5 v ? super high density cell design ? extremely low threshold voltage ? small package sop - 8 applications ? driver for relay, solenoid, motor, led etc. ? dc - dc converter circuit ? power switch ? load switch ? charging marking information pin des cri p tion pin number pin description 1 source of nmos 2 gate of nmos 3 source of pmos 4 gate of pmos 5,6 drain of pmos 7,8 drain of nmos device marking package shipping lpm 9029c sop - 8 3k/reel 1 2 3 4 8 7 6 5 s n m o s g n m o s s p m o s g p m o s d n m o s d n m o s d p m o s d p m o s l p m 9 0 2 9 c s o p - 8 t o p v i e w
preliminary datasheet lpm 9029c lp m 9029c may . - 20 1 4 email: marketing@lowpowersemi.com www.lowpowersemi.com page 2 of 5 absolute maximum ratings parameter symbol nmos pmos unit drain - source voltage v ds 30 - 20 v gate - source voltage v gs 1 0 1 0 continuous drain current ta=25 c 12 - 4. 5 a maximum power dissipation ta=25 c 2.5 w operating junction temperature t j - 40 to 85 c lead temperature t l 260 c storage temperature range t stg - 55 to 150 c thermal resistance ratings parameter symbol nmos pmos unit junction - to - case thermal resistanc e n ote b jc 50 50
preliminary datasheet lpm 9029c lp m 9029c may . - 20 1 4 email: marketing@lowpowersemi.com www.lowpowersemi.com page 3 of 5 electrical characteristics n - channel mosfet electrical characteristics parameter symbol test condition min typ . max units off characteristics drain - to - source breakdown voltage bv dss v gs = 0 v, i d =250ua 30 v zero gate voltage drain current i dss v ds = 30 v, v gs = 0v 500 n a gate - to - source leakage current i gss v ds = 0 v, v gs = 10 v 100 na on characteristics note c gate threshold voltage v gs(th) v gs = v ds , i d =250ua 0.4 0.95 v drain - to - source on - resistance r ds(on) v gs = 4.5 v, i d = 5 a 40 m v gs = 5 v, i d = 5 a 20 forward transconductance g fs v ds = 2.5 v, i d = 10 a 4 s capacitances, charges note d input capacitance c iss v gs = 0v, f =1.0mhz v ds = 15 v 1 550 pf output capacitance c oss 300 reverse transfer capacitance c rss 1 80 total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v, i d = 10 a 13 nc gate - to - source charge q gs 5.5 gate - to - drain charge q gd 3.5 switching characteristics note d turn - on delay time t d(on) v gs = 10 v, v d d = 25 v, i d = 1.0 a, r g =6 30 ns rise time t r 20 turn - off delay time t d(off) 100 fall time t f 80 body diode characteristics forward voltage (note c ) v sd v gs = 0 v, i s = 6 a 0.2 1.0 v
preliminary datasheet lpm 9029c lp m 9029c may . - 20 1 4 email: marketing@lowpowersemi.com www.lowpowersemi.com page 4 of 5 p - channel mosfet electrical characteristics parameter symbol test condition min typ . max units off characteristics drain - to - source breakdown voltage bv dss v gs = 0 v, i d = - 250ua - 20 v zero gate voltage drain current i dss v ds = - 20 v, v gs = 0v - 500 n a gate - to - source leakage current i gss v ds = 0 v, v gs = 10 v 100 na on characteristics note c gate threshold voltage v gs(th) v gs = v ds , i d = - 250ua - 0.4 - 0.95 v drain - to - source on - resistance r ds(on) v gs = - 2.5 v, i d = - 2 a 95 m v gs = - 4.5 v, i d = - 4 a 60 forward transconductance g fs v ds = - 4.5 v, i d = - 3 a 2 s capacitances, charges note d input capacitance c iss v gs = 0v, f = 1.0mhz v ds = - 15 v 1 600 pf output capacitance c oss 350 reverse transfer capacitance c rss 300 total gate charge q g(tot) v gs = - 4.5 v, v ds = - 15 v, i d = - 3 a 30 nc gate - to - source charge q gs 5.5 gate - to - drain charge q gd 8 switching characteristics note d turn - on delay time t d(on) v gs = - 10 v, v dd = - 20 v, i d = - 1.0 a, r g =6 10 ns rise time t r 15 turn - off delay time t d(off) 110 fall time t f 70 body diode characteristics forward voltage (note c ) v sd v gs = 0 v, i s = - 1 a - 0.2 - 0.95 v note a . pulse width limited by maximum junction temperature. b . surface mounted on fr4 board, t 10s. c . pulse width< 2 9 5 s, duty cycle<2% . d . guaranteed by design, not subject to production .
preliminary datasheet lpm 9029c lp m 9029c may . - 20 1 4 email: marketing@lowpowersemi.com www.lowpowersemi.com page 5 of 5 packag ing information
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